Influence of Low-Temperature Annealing on the Electrical Conductivity of SiOx Films

In this paper, the results on the conductivity of silicon enriched SiO x films and the influence of low temperature annealing at 450 °C in the H 2 and vacuum are presented. SiO x films were prepared on Si substrate by low pressure chemical vapor deposition (LP CVD) with using SiH 4 , N 2 O as the pr...

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Bibliographic Details
Published in:SILICON 2020-02, Vol.12 (2), p.433-441
Main Authors: Pylypova, O. V., Evtukh, A. A., Skryshevsky, V. A., Bratus, O. L.
Format: Article
Language:English
Subjects:
Annealing
Carrier gases
Chemical vapor deposition
Chemistry
Chemistry and Materials Science
Current voltage characteristics
Electrical resistivity
Electron states
Environmental Chemistry
Inorganic Chemistry
Lasers
Low pressure
Low temperature
Materials Science
Optical Devices
Optics
Original Paper
Photonics
Polymer Sciences
Silicon substrates
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Summary:In this paper, the results on the conductivity of silicon enriched SiO x films and the influence of low temperature annealing at 450 °C in the H 2 and vacuum are presented. SiO x films were prepared on Si substrate by low pressure chemical vapor deposition (LP CVD) with using SiH 4 , N 2 O as the precursor gases and H 2 as a carrier gas. The measurements of current-voltage characteristics were carried out in the wide temperature range 95-334 K. It was revealed that the influence of atmosphere of the low temperature annealing is significant. In general case it was established that after the annealing of the initial film in the hydrogen the conductivity increases and after annealing in the vacuum decreases. Characteristic feature of all films (without and with annealing) is the conductivity according to the Mott’s law at low voltages ( U  
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-019-00149-x