Dielectric Properties of Coronene Film Deposited onto Silicon Substrate by Spin Coating for Optoelectronic Applications

• Published in: SILICON 2022-04, Vol.14 (5), p.2201-2209
• Main Authors: Akın, Ümmühan, Yüksel, Ömer Faruk, Tuğluoğlu, Nihat
• Format: Article
• Language: English
• Subjects: Chemistry; Chemistry and Materials Science; Dielectric properties; Electrical resistivity; Environmental Chemistry; Frequency ranges; Inorganic Chemistry; Lasers; Materials Science; Optical Devices; Optics; Optoelectronics; Original Paper; Photonics; Polymer Sciences; Silicon substrates; Spin coating
• ISSN: 1876-990X; 1876-9918
• DOI: 10.1007/s12633-021-01017-3

To determine the electrical modulus, dielectric properties, and ac conductivity of Coronene semiconductor layer, we have produced Al/Coronene/n-Si structure by using the thermally evaporation and spin coating method. The variation of dielectric constant ( ε ′ ), dielectric imaginary part ( ε ″ ), tangent loss ( tanδ ), electrical modulus ( M ′ and M ″ ), and ac electrical conductivity ( σ ac ) with voltage and frequency of Coronene semiconductor layer have been investigated in the frequency range of 1 kHz – 1 MHz and at the selected voltages (0.0–0.4 V with steps 0.02 V). It is found that the ε ′ and ε ″ values decrease with increasing frequency while an increase is observed in tanδ , σ ac , and the real ( M ′ ) and the imaginary ( M ″ ) of the electrical modulus. The ε ′ , ε ″ , tanδ , σ ac , M ′ , and M ″ values have been determined as 6.53, 8.58, 1.31, 0.0477 S/cm, 0.0561 and 0.0477 for 1 kHz and 0.0046, 0.129, 2.78, 7.17 S/cm, 0.278, and 7.74 for 1 MHz at 0.0 V, respectively.