Achieving a High Figure of Merit in LDMOSFETs with Double P-window in Silicon Dioxide

In this paper, to achieve a high figure of merit (FOM), a new Lateral Double Diffused Metal Oxide Semiconductor (LDMOS) device is presented. This new proposed LDMOS consists of the double p-window located in the buried silicon dioxide’s depth, leading to an extra peak in the electric field curve. By...

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Bibliographic Details
Published in:SILICON 2023, Vol.15 (1), p.109-115
Main Authors: Gavoshani, Amir, Orouji, Ali A.
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Electric fields
Environmental Chemistry
Figure of merit
High temperature effects
Inorganic Chemistry
Lasers
Materials Science
Metal oxide semiconductors
Optical Devices
Optics
Original Paper
Photonics
Polymer Sciences
Silica
Silicon
Silicon dioxide
Two dimensional analysis
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Summary:In this paper, to achieve a high figure of merit (FOM), a new Lateral Double Diffused Metal Oxide Semiconductor (LDMOS) device is presented. This new proposed LDMOS consists of the double p-window located in the buried silicon dioxide’s depth, leading to an extra peak in the electric field curve. By optimizing the double p-window, the breakdown voltage of the proposed structure is increased by modifying the electric field profile. We call the proposed device a double p-window in buried silicon dioxide of LDMOS (DPWSD-LDMOS). Also, to reduce the self-heating effect (SHE), we have used partial silicon on insulator (PSOI) technology in the proposed DPWSD-LDMOS structure. Also, the effects of the proposed LDMOS device, including the electric field, the potential, the impact of the double p-window in the FOM, and the lattice temperature are analyzed. By two-dimensional ATLAS simulator, a conventional LDMOS (C-LDMOS), a conventional PSOI LDMOS (CPSOI-LDMOS), and the proposed DPWSD-LDMOS devices are simulated and compared. The results show that the FOM of the proposed structure improves by about 226% and 67% compared with the C-LDMOS and the CPSOI-LDMOS devices, respectively.
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-022-01991-2