Design of Multi-state DRAM Using Quantum Dot Gate Non-volatile Memory (QDNVM)

This paper presents the fabrication of single level cell (SLC), multi-level cell (MLC), triple-level cell (TLC) and quadruple level cell (QLC) using quantum dot gate non-volatile memory (QDNVM). QDNVM can store multiple bits in its discrete quantum dots in the gate region which represents different...

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Bibliographic Details
Published in:SILICON 2019-04, Vol.11 (2), p.869-877
Main Author: Karmakar, S.
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Data storage
Dynamic random access memory
Electrons
Environmental Chemistry
Inorganic Chemistry
Lasers
Materials Science
Memory devices
Memory management
Optical Devices
Optics
Original Paper
Oxidation
Photonics
Polymer Sciences
Quantum dots
Random access memory
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Summary:This paper presents the fabrication of single level cell (SLC), multi-level cell (MLC), triple-level cell (TLC) and quadruple level cell (QLC) using quantum dot gate non-volatile memory (QDNVM). QDNVM can store multiple bits in its discrete quantum dots in the gate region which represents different states of the memory cell. The precise control of charge storage in the discrete quantum dots I the gate region of the QDNVM solves the reliability issues of MLC and TLC. Dynamic Random Access Memory (DRAM) is very compact memory device which needs to refresh periodically. Use of QDNVM will increase the bit storing capability of DRAM. Compact design and increase bit handling capability of designed DRAM will help to increase the information density per unit area.
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-018-9879-z