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Deep Insights of SiGe PNPN Tunnel FET Cavity Based Biosensors for Label Free Detection
This paper reports a benchmark study on tunnel FET (TFET) biosensors by considering the effect of analyte conjugation in the nanogap cavity. A comparative investigation is carried out for the PNPN TFET biosensor with different source materials (i) Si ( E G = 1.1 eV) (ii) S i 0.5 G e 0.5 ( E G = 0.78...
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Published in: | SILICON 2023-02, Vol.15 (4), p.1821-1834 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | This paper reports a benchmark study on tunnel FET (TFET) biosensors by considering the effect of analyte conjugation in the nanogap cavity. A comparative investigation is carried out for the PNPN TFET biosensor with different source materials (i) Si (
E
G
= 1.1 eV) (ii)
S
i
0.5
G
e
0.5
(
E
G
= 0.78 eV). A wide range of electrical characteristics are analyzed to predict the high sensitivity for both material cases. Further, the uniform variation of the biomolecule length (
L
b
i
o
) along the nanogap cavity with neutral and charged analytes is investigated. Again, the impact of non-uniform filled profiles of the biomolecules such as step profile, concave, and convex in the cavity are systematically reported. Finally, the sensitivity as a parameter to measure the shifting of electrical characteristics for the biosensors is reported in a comparative manner. |
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ISSN: | 1876-990X 1876-9918 |
DOI: | 10.1007/s12633-022-02085-9 |