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Deep Insights of SiGe PNPN Tunnel FET Cavity Based Biosensors for Label Free Detection

This paper reports a benchmark study on tunnel FET (TFET) biosensors by considering the effect of analyte conjugation in the nanogap cavity. A comparative investigation is carried out for the PNPN TFET biosensor with different source materials (i) Si ( E G = 1.1 eV) (ii) S i 0.5 G e 0.5 ( E G = 0.78...

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Bibliographic Details
Published in:SILICON 2023-02, Vol.15 (4), p.1821-1834
Main Authors: Vastrad, Sakshi, Rajakumari, V., Pradhan, K. P.
Format: Article
Language:English
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Summary:This paper reports a benchmark study on tunnel FET (TFET) biosensors by considering the effect of analyte conjugation in the nanogap cavity. A comparative investigation is carried out for the PNPN TFET biosensor with different source materials (i) Si ( E G = 1.1 eV) (ii) S i 0.5 G e 0.5 ( E G = 0.78 eV). A wide range of electrical characteristics are analyzed to predict the high sensitivity for both material cases. Further, the uniform variation of the biomolecule length ( L b i o ) along the nanogap cavity with neutral and charged analytes is investigated. Again, the impact of non-uniform filled profiles of the biomolecules such as step profile, concave, and convex in the cavity are systematically reported. Finally, the sensitivity as a parameter to measure the shifting of electrical characteristics for the biosensors is reported in a comparative manner.
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-022-02085-9