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Electrical characterization of ZnO/NiO p-n junction prepared by the sol-gel method

. ZnO and NiO films were synthesized on fluourine-doped tin oxide (FTO) glass substrate by the sol-gel method. The surface morphology of the films was investigated by atomic force microscopy. The optical band gaps of the ZnO and NiO films were found to be 3.198 and 3.827eV, respectively. A ZnO/NiO p...

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Bibliographic Details
Published in:European physical journal plus 2017-04, Vol.132 (4), p.178, Article 178
Main Authors: Merih Akyuzlu, A., Dagdelen, Fethi, Gultek, Ahmet, Hendi, A. A., Yakuphanoglu, Fahrettin
Format: Article
Language:English
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Summary:. ZnO and NiO films were synthesized on fluourine-doped tin oxide (FTO) glass substrate by the sol-gel method. The surface morphology of the films was investigated by atomic force microscopy. The optical band gaps of the ZnO and NiO films were found to be 3.198 and 3.827eV, respectively. A ZnO/NiO p-n junction diode was prepared and electrical charge transport mechanism of the diode was analyzed using thermionic emission and Norde functions. The ideality factor, barrier height and series resistance of the diode were determined to be 6.46, 1.036eV and 39.1 M Ω , respectively. The obtained results indicate that ZnO/NiO p-n junction can be used as transparent diode for optic communications.
ISSN:2190-5444
2190-5444
DOI:10.1140/epjp/i2017-11442-8