Temperature and Pressure Dependence of Elastic Constants and Related Parameters for InP Semiconductor

Based on the empirical pseudo-potential method (EPM), the symmetric and anti-symmetric pseudo-potential form factors have been adjusted to match the calculated energy gaps of InP with the corresponding experimental values. The adjusted symmetrical and anti-symmetrical form factors at G (1,1,1) have...

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Bibliographic Details
Published in:SILICON 2017-03, Vol.9 (2), p.183-192
Main Authors: Degheidy, A. R., Elkenany, E. B., Alfrnwani, O. A.
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Compressibility
Eigenvalues
Elastic properties
Energy
Energy gap
Environmental Chemistry
Form factors
Indium phosphides
Inorganic Chemistry
Investigations
Isotropy
Lasers
Materials Science
Mathematical analysis
Optical Devices
Optics
Original Paper
Parameters
Photonics
Polymer Sciences
Pressure dependence
Temperature dependence
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Summary:Based on the empirical pseudo-potential method (EPM), the symmetric and anti-symmetric pseudo-potential form factors have been adjusted to match the calculated energy gaps of InP with the corresponding experimental values. The adjusted symmetrical and anti-symmetrical form factors at G (1,1,1) have been used to calculate the polarity of the considered material. The elastic constants C 11 , C 12 and C 44 of InP have been obtained. The knowledge of these constants helps us to determine their related elastic parameters such as bulk ( B u ), shear ( C s ) and Young’s ( Y 0 ) moduli. Other important parameters such as Poisson’s ratio ( σ ), linear compressibility ( C 0 ), Cauchy ratio ( C a ) , Born ratio ( B 0 ), isotropy factor (A ), bond stretching ( α ), bond binding force ( β ) and internal strain parameter ( ζ ) for InP have also been calculated. The variation of all studied quantities with temperature and pressure has been investigated. Our results show a good agreement with the available experimental data. Most of our data may be taken as references especially for high values of temperature and pressure.
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-016-9408-x