Optical band gap engineering of ZnO nanophosphors via Cu incorporation for ultraviolet–violet LED

The tunability of optical band gap and augmentation of luminescence intensity of Cu-doped ZnO nanophosphors for ultraviolet and violet light-emitting diodes grown by microwave-assisted aqueous solution technique were studied at room temperature for various doping concentrations. The UV–Vis spectral...

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Bibliographic Details
Published in:European physical journal plus 2020-08, Vol.135 (8), p.684, Article 684
Main Author: Khan, G. R.
Format: Article
Language:English
Subjects:
Applied and Technical Physics
Aqueous solutions
Atomic
Complex Systems
Condensed Matter Physics
Copper
Electrons
Emission analysis
Energy gap
Interstitial defects
Light emitting diodes
Luminescence
Luminous intensity
Mathematical and Computational Physics
Molecular
Nanomaterials
Nanophosphors
Optical and Plasma Physics
Photoluminescence
Physics
Physics and Astronomy
Regular Article
Room temperature
Semiconductors
Spectral analysis
Spectrum analysis
Theoretical
Ultraviolet emission
Zinc oxide
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Summary:The tunability of optical band gap and augmentation of luminescence intensity of Cu-doped ZnO nanophosphors for ultraviolet and violet light-emitting diodes grown by microwave-assisted aqueous solution technique were studied at room temperature for various doping concentrations. The UV–Vis spectral analysis demonstrated that band gap engineering of ZnO nanophosphors can be performed through incorporation of Cu ions into the ZnO matrix by controlling the dopant content. The photoluminescence investigations revealed that a strong UV emission centred around 346–348 nm and an intense violet band comprising of two peaks centred about 403 nm and 424 nm occur in the absence of any other band. A thorough study of the defect-related PL spectra elucidated that these violet peaks originated from energetically more probable deep-acceptor zinc vacancy and shallow-donor zinc interstitial defect transitions. The luminescence intensity of nanophosphors can be optimized through modification of intrinsic defect density by adjusting Cu concentration in the ZnO host. The results are significant for ZnO-based photoluminescence cutting-edge technology.
ISSN:2190-5444
2190-5444
DOI:10.1140/epjp/s13360-020-00704-1