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Synthesis, Characterization, Morphological, Linear and Nonlinear Optical Properties of Silicon Carbide Doped PVA Nanocomposites
This work reports the synthesis, characterization, morphological, linear and nonlinear optical (NLO) features of undoped and silicon carbide (SiC) doped polyvinyl alcohol (PVA) nanocomposites thin films with different doping concentration of SiC. The sample was characterized by UV-Visible, Emission...
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Published in: | SILICON 2022-11, Vol.14 (17), p.11163-11170 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | This work reports the synthesis, characterization, morphological, linear and nonlinear optical (NLO) features of undoped and silicon carbide (SiC) doped polyvinyl alcohol (PVA) nanocomposites thin films with different doping concentration of SiC. The sample was characterized by UV-Visible, Emission and FT-IR spectrometer, respectively. The morphology of undoped and SiC doped PVA nanocomposites was studied by Field emission scanning electron microscopy (FESEM) and the chemical composition was identified by Energy dispersive X-ray (EDAX) spectra. The FESEM reveals that the SiC nanoparticles are uniformly embedded on PVA and exhibits a spherical shaped structure. The NLO features of the nanocomposite films have been studied by a continuous wave diode laser working at 650 nm wavelength. The closed aperture Z-scan technique divulge the characters of self-defocusing and open aperture Z − scan methods reveals the characteristic property of both saturable absorption (SA) and reverse saturable absorption (RSA). A switch over from SA to RSA was observed in the nanocomposite films by increasing the weight% of SiC. The nonlinear refraction and nonlinear coefficient of absorption of the films was found to be the order of 10
− 12
m
2
/W and 10
− 5
m/W, respectively. The experimental results are divulged that the SiC doped PVA nanocomposite films are potential material for optoelectronics applications. |
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ISSN: | 1876-990X 1876-9918 |
DOI: | 10.1007/s12633-022-01852-y |