Impact of Channel Doping Concentration on the Performance Characteristics and the Reliability of Ultra-Thin Double Gate DG-FinFET Compared with Nano-Single Gate FD-SOI-MOSFET by Using TCAD-Silvaco Tool

• Published in: SILICON 2022-05, Vol.14 (7), p.3477-3491
• Main Authors: Bourahla, N., Hadri, B., Bourahla, A.
• Format: Article
• Language: English
• Subjects: Chemistry; Chemistry and Materials Science; Doping; Environmental Chemistry; Inorganic Chemistry; Integrated circuits; Ion currents; Lasers; Leakage current; Materials Science; MOSFETs; Optical Devices; Optics; Original Paper; Photonics; Polymer Sciences; Power consumption; Production costs; Reliability; SOI (semiconductors); Threshold voltage; Titanium dioxide; Transconductance; Transistors
• ISSN: 1876-990X; 1876-9918
• DOI: 10.1007/s12633-021-01121-4

The efficiency of the integrated circuit (IC) as the reliability, speed, high production costs, and power consumption will be reduced by the nanometric size of the MOSFET transistor, the manufacturing of this device was getting into 7 nm, but the transition to 5 nm was predicted to appear in the future, to solve the decreased performance problems, the nano-double gate FinFET transistor are considered as an appropriate choice than the MOSFET device because of its improved channel control gate enabling enhanced device performance. In this paper, a comparison of the analog and RF performance of the ultra-short double gate DG-FinFET (Lg = 5 nm) with high-k material (TiO2) and the single gate fully depleted silicon on isolator (SG-FD-SOI-MOSFET) devices are investigated by using TCAD-SILVACO-Atlas simulator, the differents characteristics as leakage current, threshold voltage, Ion current, subthreshold slope, DIBL, transconductance, and GIDL are evaluated, furthermore, the channel doping has an important role in optimizing parameters of these devices, hence, the influence of channel doping concentration on the performance characteristics are investigated in this research, the results proved that the nano-short DG-FinFET device is more compatible for reduced short channel effect SCEs and improved DC and RF performances than the SG-FD-SOI-MOSFET,, an appropriate reference value of the channel doping concentration will be predicted in the future for increased the efficiency of these devices, In addition the parasitic capacitances are significantly reduced compared to the SG-FD-SOI-MOSFET, the cut off frequency (ft) and the maximum oscillator frequency (fmax) are significantly enhanced, which making DG-FinFET a suitable candidate for the RF applications and for the innovation of device manufacturing process in the future.