Analysis of Current-Voltage-Temperature and Capacitance-Voltage-Temperature Characteristics of Re/n-Si Schottky Contacts

• Published in: SILICON 2018-03, Vol.10 (2), p.361-369
• Main Authors: Durmuş, Haziret, Kılıç, Hamdi Şükür, Gezgin, Serap Yiğit, Karataş, Şükrü
• Format: Article
• Language: English
• Subjects: Capacitance-voltage characteristics; Chemistry; Chemistry and Materials Science; Emission analysis; Environmental Chemistry; Inorganic Chemistry; Lasers; Materials Science; Normal distribution; Optical Devices; Optics; Original Paper; Photonics; Polymer Sciences; Pulsed laser deposition; Pulsed lasers; Schottky diodes; Temperature dependence; Thermionic emission
• ISSN: 1876-990X; 1876-9918
• DOI: 10.1007/s12633-016-9456-2

The current–capacitance-voltage characteristics of Re/n-type Si Schottky contacts have been measured in the temperature range of 60–300 K by steps of 20 K. The ohmic and Schottky contacts are made by the Pulsed Laser Deposition (PLD) technique. The values of barrier heights, ideality factors and serial resistances have been found to be strongly temperature dependent. In short, the ideality factor decreased and the barrier height increased with increasing temperature, when the temperature-dependent ( I − V ) characteristics were analyzed on the basis of the thermionic emission (TE) theory. The experimental barrier height and ideality factor were plotted against (kT) −1 which gives two slopes, one is over the 60–140 K region and the other is over the 160–300 K region presenting a double Gaussian distribution of barrier heights. Two Gaussian distribution analyses of the I − V characteristics of the Re/n-type Si Schottky barrier diodes gave the mean barrier heights of 0.812 and 0.473 eV and standard deviations ( σ s ) of 102 mV and 55 mV, respectively. Therefore, these values of the mean barrier height have been verified with the modified ln( I 0 / T 2 ) - q 2 σ o 2 /2 k 2 T 2 vs (k T ) −1 plot which belongs to two temperature sections.