Influence of electron irradiation on the microhardness of cobalt doped silicon

The influence of the cobalt dopant concentration and electron irradiation on the microhardness of single-crystal silicon has been studied The appearance of impurity cobalt atoms in doped silicon was shown to cause the decrease in the microhardness of the initial crystal, while electron irradiation r...

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Bibliographic Details
Main Authors: Tashmetov, Mannab Yusupovich, Makhkamov, Shermaxmat, Erdonov, Muzaffar Nazarovich, Saidov, Rustam Piradinovich, Sulaymanov, Nodimjon Turgunpulatovich, Tillaev, Tulkin Sotiboldievich, Kholmedov, Khamid Maxkamovich
Format: Conference Proceeding
Language:English
Subjects:
Chemical reactions
Cobalt
Crystal defects
Electron irradiation
Impurities
Microhardness
Radiation damage
Silicon
Single crystals
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Summary:The influence of the cobalt dopant concentration and electron irradiation on the microhardness of single-crystal silicon has been studied The appearance of impurity cobalt atoms in doped silicon was shown to cause the decrease in the microhardness of the initial crystal, while electron irradiation results in increasing in the microhardness values of both undoped and doped silicon. The scheme of quasi-chemical reactions is proposed for the formation of complexes with the participation of impurity and radiation defects responsible for the change in the microhardness of doped silicon.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0193159