Influence of electron irradiation on the microhardness of cobalt doped silicon

The influence of the cobalt dopant concentration and electron irradiation on the microhardness of single-crystal silicon has been studied The appearance of impurity cobalt atoms in doped silicon was shown to cause the decrease in the microhardness of the initial crystal, while electron irradiation r...

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Main Authors: Tashmetov, Mannab Yusupovich, Makhkamov, Shermaxmat, Erdonov, Muzaffar Nazarovich, Saidov, Rustam Piradinovich, Sulaymanov, Nodimjon Turgunpulatovich, Tillaev, Tulkin Sotiboldievich, Kholmedov, Khamid Maxkamovich
Format: Conference Proceeding
Language:English
Subjects:
Chemical reactions
Cobalt
Crystal defects
Electron irradiation
Impurities
Microhardness
Radiation damage
Silicon
Single crystals
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creator Tashmetov, Mannab Yusupovich
Makhkamov, Shermaxmat
Erdonov, Muzaffar Nazarovich
Saidov, Rustam Piradinovich
Sulaymanov, Nodimjon Turgunpulatovich
Tillaev, Tulkin Sotiboldievich
Kholmedov, Khamid Maxkamovich
description The influence of the cobalt dopant concentration and electron irradiation on the microhardness of single-crystal silicon has been studied The appearance of impurity cobalt atoms in doped silicon was shown to cause the decrease in the microhardness of the initial crystal, while electron irradiation results in increasing in the microhardness values of both undoped and doped silicon. The scheme of quasi-chemical reactions is proposed for the formation of complexes with the participation of impurity and radiation defects responsible for the change in the microhardness of doped silicon.
doi_str_mv 10.1063/5.0193159
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects Chemical reactions
Cobalt
Crystal defects
Electron irradiation
Impurities
Microhardness
Radiation damage
Silicon
Single crystals
title Influence of electron irradiation on the microhardness of cobalt doped silicon
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