Performance Analysis of III-V Hetero/Homojunction TFETs: an Analog Circuit Design Perspective

This work presents a performance analysis of III-V Tunnel FETs (TFETs) for low voltage and low power analog circuit design. Resistive load differential amplifier, OTA, and Telescopic OTA parameters are compared in the subthreshold region of operation for the same device dimensions and current. Analo...

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Bibliographic Details
Published in:SILICON 2022-12, Vol.14 (18), p.12525-12539
Main Authors: Yadav, Atul Kumar, Panwar, Sourabh, Srivastava, Shobhit, Acharya, Abhishek
Format: Article
Language:English
Subjects:
Analog circuits
Chemistry
Chemistry and Materials Science
Circuit design
Circuits
Current mirrors
Differential amplifiers
Environmental Chemistry
Harmonic distortion
Heterojunctions
Homojunctions
Inorganic Chemistry
Lasers
Low voltage
Materials Science
Optical Devices
Optics
Original Paper
Parameters
Photonics
Polymer Sciences
Power management
Power supply
Signal to noise ratio
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Summary:This work presents a performance analysis of III-V Tunnel FETs (TFETs) for low voltage and low power analog circuit design. Resistive load differential amplifier, OTA, and Telescopic OTA parameters are compared in the subthreshold region of operation for the same device dimensions and current. Analog performance parameters are better in III-V TFETs compared to FinFETs. Specifically, a better gain and bandwidth range can be achieved in heterojunction TFETs in the supply voltage range (V DD ) of 450 mV - 850 mV. In addition, the homojunction TFET exhibits good performance for V DD   850 mV. The gain for homojunction III-V TFETs OTA is ten times and for heterojunction, it is four times as of FinFETs for 250 mV. The gain for homojunction III-V TFETs OTA is approximately the same and for heterojunction, it is two times higher as of FinFETs for 450 mV. The gain for homojunction III-V TFETs OTA is lower than as of FinFETs and for heterojunction, it is 1.2 times higher than that of FinFETs for 850 mV. The current mirror circuits using III-V TFETs provide accuracy in mirroring, high output resistance, and low power performance compared to FinFETs. Similarly, the track and hold circuit using III-V TFETs shows a better Signal to Noise Ratio, Effective Numbers of Bits, spurious-free Dynamic Range, Total Harmonic Distortion etc., than FinFETs for low voltages.
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-022-01889-z