Analytical modeling and Simulation Based Investigation of Triple material surrounding gate heterojunction tunnel FET

A two-dimensional analytical model is proposed in this paper for surface potential and drain current on Triple Material Surrounding Gate Heterojunction Tunnel Field Effect Transistor (HJ-TFET). The theoretical analysis is performed to break down the 2D Poisson Equations into two 1D equations. By imp...

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Bibliographic Details
Published in:SILICON 2022-11, Vol.14 (16), p.10729-10740
Main Authors: Suguna, M., Nithya sree, V. A., Kaveri, R., Hemalatha, M., Balamurugan, N. B., Sriramkumar, D., Dhanaselvam, P. Suveetha
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Decomposition
Electric fields
Electrons
Engineering schools
Environmental Chemistry
Field effect transistors
Heterojunctions
Inorganic Chemistry
Lasers
Materials Science
Mathematical analysis
Mathematical models
Optical Devices
Optics
Original Paper
Photonics
Poisson equation
Polymer Sciences
Semiconductor devices
Silicon
Simulation
Transistors
Tunnels
Two dimensional analysis
Two dimensional models
Work functions
Citations: Items that this one cites
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Summary:A two-dimensional analytical model is proposed in this paper for surface potential and drain current on Triple Material Surrounding Gate Heterojunction Tunnel Field Effect Transistor (HJ-TFET). The theoretical analysis is performed to break down the 2D Poisson Equations into two 1D equations. By implementing Finite Differentiation Method and varying work functions, Triple Material Gates are decomposed into three different individual gates with different work functions. These individual 1D Poisson equations that are decomposed are combined by applying sufficient boundary constraints. As a result, this reduces the difficulty of solving 2D Poisson equations. The expressions of surface potential and drain current are made simpler for the proposed analytical model. Finally, the outcomes of the study are correlated with the TCAD simulation. The proposed model is therefore validated to explain the nature of the Triple Material Surrounding Gate Heterojunction TFETs.
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-022-01687-7