A new low gain avalanche diode concept: the double-LGAD

This paper describes the new concept of the double LGAD (low-gain avalanche diodes). The goal was to increase the charge at the input of the electronics, keeping a time resolution equal to or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs whil...

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Bibliographic Details
Published in:European physical journal plus 2023-11, Vol.138 (11), p.990, Article 990
Main Authors: Carnesecchi, F., Strazzi, S., Alici, A., Arcidiacono, R., Cartiglia, N., Cavazza, D., Durando, S., Ferrero, M., Margotti, A., Menzio, L., Nania, R., Sabiu, B., Scioli, G., Siviero, F., Sola, V., Vignola, G.
Format: Article
Language:English
Subjects:
Applied and Technical Physics
Atomic
Avalanche diodes
Complex Systems
Condensed Matter Physics
Electronics
Mathematical and Computational Physics
Molecular
Optical and Plasma Physics
Physics
Physics and Astronomy
Receivers & amplifiers
Regular Article
Sensors
Theoretical
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Summary:This paper describes the new concept of the double LGAD (low-gain avalanche diodes). The goal was to increase the charge at the input of the electronics, keeping a time resolution equal to or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 µm, 35 µm and 50 µm.
ISSN:2190-5444
2190-5444
DOI:10.1140/epjp/s13360-023-04621-x