Static Characterization On-State of an Industrial Si Power MOSFET at Cryogenic Temperature

To reduce fuel consumption and CO 2 emissions, an effort has been made in aircraft industry to investigate a superconducting application requiring an on-board cryogenic system. In this investigation, the question of cryogenic power electronics arose in an effort to reduce losses. Switches are the co...

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Bibliographic Details
Published in:IEEE transactions on applied superconductivity 2024-05, Vol.34 (3), p.1-5
Main Authors: Laib, Yanis, Berger, Kevin, Rael, Stephane, Leveque, Jean, Viguier, Christophe, El-Wakeel, Abdelrahman, Zhang, Min
Format: Article
Language:English
Subjects:
Avionics
Condensed Matter
Cryogenic characterization
Cryogenic equipment
Cryogenic temperature
Cryogenics
Current carriers
Electric potential
Electric power
Electrical resistance measurement
Electromagnetism
Energy consumption
Engineering Sciences
Logic gates
MOSFET
MOSFETs
Physics
power applications
power electronics
Resistance
silicon
Superconductivity
Switches
Temperature
Threshold voltage
Voltage
Voltage measurement
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Summary:To reduce fuel consumption and CO 2 emissions, an effort has been made in aircraft industry to investigate a superconducting application requiring an on-board cryogenic system. In this investigation, the question of cryogenic power electronics arose in an effort to reduce losses. Switches are the core of power electronics converters, which means that reducing their losses is a key point for the whole converter. But cryogenic temperatures may alter their behavior due to material contractions and changes in charge carrier behavior. It is therefore important to determine the optimum temperature for the switches, or at least the range within which there is a compromise between reducing losses and ensuring that the switches behave correctly. The Si-MOSFET was initially chosen to better understand the behavior of a single material at cryogenic temperature. The main losses of the MOSFET come from the Drain-Source resistance R DSON . In addition, to ensure the switch operates correctly, the evolution of the voltage threshold V TH as a function of temperature must be determined. This paper presents new results on the study of R DSON Drain-Source resistance at cryogenic temperatures. Results and discussions are also conducted on the V TH voltage threshold and I D ( V DS ) curves of an industrial Si power MOSFET from 300 K down to 10 K.
ISSN:1051-8223
1558-2515
DOI:10.1109/TASC.2024.3356431