A bipolar junction transistor EMC modeling method based on physical characteristic measurement and simplex optimization

Summary Bipolar junction transistors (BJTs) are widely used in various electronic systems, and the establishment of the electromagnetic compatibility (EMC) model for BJTs is crucial for EMC analysis of these systems, such as high‐frequency circuits. In this paper, a BJT EMC model that satisfies both...

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Bibliographic Details
Published in:International journal of circuit theory and applications 2024-02, Vol.52 (2), p.551-568
Main Authors: Pan, Zeyu, Zhang, Yu, Ren, Dan, Yang, Jinsheng, Nie, Bao‐Lin, Du, Pingan
Format: Article
Language:English
Subjects:
Bipolar transistors
BJT
Curve fitting
Electromagnetic compatibility
electromagnetic compatibility (EMC)
Electronic systems
Impact analysis
Junction transistors
Mathematical models
Model accuracy
modeling
Modelling
parameter extraction
Parameter identification
Physical properties
Semiconductor devices
Simplex method
SPICE
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Summary:Summary Bipolar junction transistors (BJTs) are widely used in various electronic systems, and the establishment of the electromagnetic compatibility (EMC) model for BJTs is crucial for EMC analysis of these systems, such as high‐frequency circuits. In this paper, a BJT EMC model that satisfies both functionality and EMC analysis requirements was established based on physical characteristic measurement. First, comprehensive and systematic methods for measurement and extracting SPICE parameters based on physical BJTs are presented, including a proposed curve‐fitting calculation method for extracting barrier capacitance parameters. Second, an analysis of the impact of major BJT electrical characteristics parameters was conducted, leading to the identification of important model parameters affecting BJT functionality and EMC. Finally, the primary BJT model was optimized using the simplex method, and a method for EMC analysis and verification of the BJT model was presented. The experimental and simulation results are in good agreement, and the established model meets the accuracy requirements for both EMC and functionality. Therefore, the proposed method is feasible and suitable for the EMC modeling of BJTs. In this paper, a bipolar junction transistor (BJT) electromagnetic compatibility (EMC) model that satisfies both functionality and EMC analysis requirements was established based on physical characteristic measurement. The primary BJT model was optimized using the simplex method, and a method for EMC analysis and verification of the BJT model was presented.
ISSN:0098-9886
1097-007X
DOI:10.1002/cta.3797