Performance Calculation for a MEMS Switch with a Floating Electrode

Switches fabricated using MEMS technology are considered as a promising element base of radio electronics. The main characteristic of a MEMS switch is the ratio of capacitances in the closed and open states. For conventional devices, this ratio is of several units, but it can be significantly increa...

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Bibliographic Details
Published in:Russian microelectronics 2023-12, Vol.52 (6), p.493-503
Main Authors: Morozov, M. O., Uvarov, I. V.
Format: Article
Language:English
Subjects:
Acceptable noise levels
Borosilicate glass
Capacitance
Contact resistance
Electrical Engineering
Engineering
Frequency ranges
Glass substrates
Insertion loss
Mathematical analysis
Microelectromechanical systems
Parasitics (electronics)
Radio electronics
Sapphire
Silicon substrates
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Summary:Switches fabricated using MEMS technology are considered as a promising element base of radio electronics. The main characteristic of a MEMS switch is the ratio of capacitances in the closed and open states. For conventional devices, this ratio is of several units, but it can be significantly increased by implementing original design solutions. This paper studies the switch, which is a combination of capacitive and resistive devices. Its working characteristics are considered depending on the substrate properties and contact resistance. The switch provides a capacitance ratio of 27.7 and 46.1 when using sapphire and borosilicate glass substrates, while high-resistivity silicon does not allow attaining values above 7.4 due to the high parasitic capacitance. The isolation and insertion loss are 14.7–19.4 and 0.8–1.1 dB in the frequency range of 4–10 GHz on a sapphire wafer. Acceptable S-parameters are achieved when the contact resistance is not higher than 1 Ω.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739723700750