Effects of solution height and crystal rotation on the solution flow behavior in the top-seeded solution growth of SiC single crystals

Top-seeded solution growth (TSSG) is a crucial technique for producing high-quality SiC crystals, with the quality of the crystal being significantly influenced by the temperature, flow, and carbon concentration in the solution. A global numerical simulation has been performed to investigate the eff...

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Bibliographic Details
Published in:CrystEngComm 2024-02, Vol.26 (7), p.122-131
Main Authors: Sui, Zhanren, Xu, Lingbo, Cui, Can, Wang, Rong, Pi, Xiaodong, Yang, Deren, Han, Xuefeng
Format: Article
Language:English
Subjects:
Crystal growth
Flow distribution
Flow stability
Free surfaces
Rotation
Single crystals
Vortices
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Summary:Top-seeded solution growth (TSSG) is a crucial technique for producing high-quality SiC crystals, with the quality of the crystal being significantly influenced by the temperature, flow, and carbon concentration in the solution. A global numerical simulation has been performed to investigate the effects of solution height and crystal rotation in SiC crystal growth. The simulation results indicate that as the solution height increases, there are two distinct flow patterns: single-vortex pattern and double-vortex pattern. Because of the change in the flow pattern, the flow field beneath the seed crystal and free surface will undergo a significant change. The varying effects of seed crystal rotation are also demonstrated under different solution height scenarios. Increasing the rotational speed of the seed crystal will enhance the stability of the solution flow field and crystal growth rate for the single-vortex pattern. Increasing the rotational speed or solution height appropriately is beneficial for enhancing the crystal growth rate in the double-vortex pattern. Excessively high rotational speeds or solution heights, however, will reduce the rate of crystal growth. To optimize crystal growth rates, it is advisable to choose rotational speeds corresponding to specific melt heights. In this study, rotating the crystal at 20-30 rpm in a double-vortex pattern resulted in a higher average growth rate.
ISSN:1466-8033
1466-8033
DOI:10.1039/d3ce01070h