High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers

In this study, we investigate the spin Hall effect in heterostructures of Bi0.85Sb0.15 (10 nm) topological insulator/Ru(Ti)/Ta/Co20Fe60B20/MgO with perpendicular magnetic anisotropy. By optimizing the Ru (Ti) interfacial layer thickness as well as deposition condition of BiSb, we achieve a large eff...

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Bibliographic Details
Published in:Applied physics letters 2024-02, Vol.124 (7)
Main Authors: Ruixian, Zhang, Huy, Ho Hoang, Shirokura, Takanori, Hai, Pham Nam, Le, Quang, York, Brian, Hwang, Cherngye, Liu, Xiaoyong, Gribelyuk, Michael, Xu, Xiaoyu, Le, Son, Maeda, Maki, Fan, Tuo, Tao, Yu, Takano, Hisashi
Format: Article
Language:English
Subjects:
Electrical resistivity
Hall effect
Heavy metals
Heterostructures
Magnesium oxide
Magnetic anisotropy
Multilayers
Power consumption
Room temperature
Thickness
Threshold currents
Titanium
Topological insulators
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Summary:In this study, we investigate the spin Hall effect in heterostructures of Bi0.85Sb0.15 (10 nm) topological insulator/Ru(Ti)/Ta/Co20Fe60B20/MgO with perpendicular magnetic anisotropy. By optimizing the Ru (Ti) interfacial layer thickness as well as deposition condition of BiSb, we achieve a large effective spin Hall angle of 6.0 ± 0.1 and relatively high electrical conductivity of 1.5 × 105 Ω−1 m−1 at room temperature. We, then, demonstrate spin–orbit torque-induced magnetization switching driven by a small threshold current density of 1 × 106 Acm−2. Benchmarking shows that the writing power consumption of our stack is 2–3 orders smaller than that of heavy metals.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0184870