Effect of nanosilica abrasive properties on tungsten chemical mechanical planarization

• Published in: Journal of materials science. Materials in electronics 2024-02, Vol.35 (5), p.338, Article 338
• Main Authors: Zhang, Jingwei, Ren, Gaoyuan, Wang, Li, Xie, Wenxiang, Pan, Deng, Su, Hongjiu, Wang, Shudong
• Format: Article
• Language: English
• Subjects: Abrasives; Characterization and Evaluation of Materials; Chemical-mechanical polishing; Chemistry and Materials Science; Coefficient of friction; Coupling agents; Friction; Material removal rate (machining); Materials Science; Optical and Electronic Materials; Particle size; Silicon dioxide; Substrates; Surface charge; Tungsten; Zeta potential
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-023-11914-5

The effect of particle size, solid content, and surface charge of nano-silica on tungsten chemical mechanical polishing was explored to clarify the mechanical action. Particle size and solid content both showed a linear relationship with tungsten material removal rate. Analyzed with coefficient friction during the process, the contact area and contact mode changed with the varying particle size and solid content. In addition, the different surface charge of nano-silica was prepared through a graft of different silane coupling agent. The positively charged A-Surf-silica improved the tungsten removal rate by 33.2% and also presented higher coefficient friction in the polishing process. Moreover, tungsten removal rate shows a linear positive correlation to the abrasives’ zeta potential. The mechanism of abrasives in tungsten chemical mechanical planarization is discussed by combining DLVO theory and coefficient friction through the contact area, contact mode, and the synergy between the abrasives and the substrate of the mechanical action.