Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO2

Since the discovery of ferroelectricity in doped HfO2 and ZrO2 thin films over a decade ago, fluorite‐structured ferroelectric thin films have attracted much research attention due to their excellent scalability and complementary metal‐oxide semiconductor compatibility compared to conventional perov...

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Published in:Advanced functional materials 2024-02, Vol.34 (8), p.n/a
Main Authors: Xu, Bohan, Lomenzo, Patrick D., Kersch, Alfred, Schenk, Tony, Richter, Claudia, Fancher, Chris M., Starschich, Sergej, Berg, Fenja, Reinig, Peter, Holsgrove, Kristina M., Kiguchi, Takanori, Mikolajick, Thomas, Boettger, Ulrich, Schroeder, Uwe
Format: Article
Language:English
Subjects:
Atomic layer epitaxy
Ferroelectric materials
Ferroelectricity
Fluorite
Perovskites
strain
stress
thin film
Thin films
zirconia
Zirconium dioxide
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Summary:Since the discovery of ferroelectricity in doped HfO2 and ZrO2 thin films over a decade ago, fluorite‐structured ferroelectric thin films have attracted much research attention due to their excellent scalability and complementary metal‐oxide semiconductor compatibility compared to conventional perovskite ferroelectric materials. Although various factors influencing the formation of the ferroelectric properties are identified, a clear understanding of the causes of the phase formation have been difficult to determine. In this work, ZrO2 films deposited by atomic layer deposition and chemical solution deposition have resulted in films with completely different structural properties. Regardless of these differences, a general relationship between strain and phase formation is established, leading to a more unified understanding of ferroelectric phase formation in undoped ZrO2 films, which can be applied to other fluorite‐structured films. A novel and global relationship between ferroelectric behavior and in‐plane tensile strain is discovered in undoped ZrO2 thin films. Different in‐plane tensile strains are expected to stabilize different phases with different electrical properties. This relationship can also be applied to other fluorite‐structured ferroelectric thin films, including HfO2‐based ferroelectrics.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.202311825