Diminishing the migration resistance of zinc ions by cation vacancy engineering in a spinel-framework

• Published in: Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2024-02, Vol.12 (8), p.4877-4883
• Main Authors: Yuan, Jingjing, Qiao, Yifan, Li, Yifan, Xu, Hui, Zhang, Wenyao, Zhang, Zhihao, He, Guangyu, Chen, Haiqun
• Format: Article
• Language: English
• Subjects: Carbon nanotubes; Cations; Diffusion barriers; Electrochemistry; Etching; Ions; Nanotechnology; Nanotubes; Rechargeable batteries; Spinel; Tetrahedra; Zinc; Zinc compounds
• ISSN: 2050-7488; 2050-7496
• DOI: 10.1039/d3ta07451j

The three-dimensional framework structure makes the ZnMn 2 O 4 spinel an excellent host material for zinc ion intercalation and deintercalation processes. However, the high migration energy barrier of zinc ions from the tetrahedron 8a site to the octahedron 16c site in the ZnMn 2 O 4 spinel framework limits its practical application for zinc-ion batteries. The focus of this work is to reduce the migration resistance of zinc ions by constructing cationic zinc vacancies in ZnMn 2 O 4 (named Zn 1− x x Mn 2 O 4 ). The reasonable structure adjusted by alkaline etching is conducive to the diffusion of zinc ions. Combining the electrochemical tests and theoretical investigations, it was found that the introduction of zinc vacancies in the Zn 1− x x Mn 2 O 4 spinel framework caused the diffusion barrier of zinc ions to be reduced by approximately 0.4 eV compared to ZnMn 2 O 4 . In addition, the optimal Zn 0.65 0.35 Mn 2 O 4 with 35% zinc vacancies was cross-linked by conductive carbon nanotubes (CNTs) to establish an excellent conducting network. The as-prepared Zn 0.65 0.35 Mn 2 O 4 /CNT composite exhibits a high reversible capacity of 479.3 mA h g −1 at 0.05 A g −1 with a good energy density of 640 W h kg −1 at 28 W kg −1 . Our work is to convert the electrochemically poorly active traditional ZnMn 2 O 4 spinel into a functionally active electrode for zinc-ion batteries. ZnMn 2 O 4 with Zn vacancies has been constructed via alkaline etching, which shows lower diffusion energy barriers for Zn 2+ than ZnMn 2 O 4 .