Thermochromic response of an individual Sn:VO2 strip with multiple coexisting phase domains

• Published in: Phase transitions 2024-03, Vol.97 (3), p.159-170
• Main Authors: Xie, De-cong, Liu, Yong-xing, Liu, Qing-ru, Miao, Hu-wei, Liu, Wei, Wu, Fa-yu, Dong, Hao-nan
• Format: Article
• Language: English
• Subjects: metal-semiconductor transition; Oxygen; oxygen vacancies; Phase diagrams; Phase transitions; Raman spectra; Sn-doped; Temperature dependence; temperature-dependent Raman spectra; Tensile stress; thermochromic response; Tin; Transformation temperature; Vanadium oxides
• ISSN: 0141-1594; 1029-0338
• DOI: 10.1080/01411594.2023.2300997

The respective roles of Sn atoms and oxygen vacancies (Ovs) on phase transition in an isolated Sn:VO 2 with multi-domains were investigated through the Temperature-dependent Raman spectra and the dynamical sequence of phase transformation. A Component-Temperature phase diagram depicting the dependence of phase transformation temperature on the content of Sn or Ovs is constructed. The increasing Sn content could elevate the tensile stress to sequentially induce the metallic R phase to finally form semi-conductive M1, T1, T2, and M2 phases. Meanwhile, the presence of oxygen vacancies caused by doped Sn exerted pressure stress to perturb the M2 phase to narrow its existing region slightly. In a certain order, the four co-existing phases M1, T1, T2, and M2 in an individual Sn:VO 2 could be successively obtained by the distinct Semiconductor-Semiconductor Transition from M2, after undergoing Metal-Semiconductor Transition of R-M2 at 52°C, 62°C, 65°C, 67°C, respectively.