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Energy-Efficient Reconfigurable Transistor Achieving Sub-Nanojoule Consumption Per Programming Event
We hereby present experimental demonstration of the energy-efficient ferroelectric based electrostatically doping (Fe-ED) reconfigurable field-effect transistors (RFETs). By incorporating the ferroelectric program gates (Fe-PGs), our Fe-ED RFETs obtain the non-volatile reconfigurability between N/P...
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Published in: | IEEE electron device letters 2024-03, Vol.45 (3), p.484-487 |
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Main Authors: | , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | We hereby present experimental demonstration of the energy-efficient ferroelectric based electrostatically doping (Fe-ED) reconfigurable field-effect transistors (RFETs). By incorporating the ferroelectric program gates (Fe-PGs), our Fe-ED RFETs obtain the non-volatile reconfigurability between N/P modes. This achievement leads to an unprecedentedly low energy consumption per programming event, measuring below the nanojoule range. Additionally, these devices exhibit remarkable endurance, withstanding over 104 programmable cycles even under 1 ms pulse stress, and acceptable retention, maintaining their operation modes for at least 104 s. This device strategy represents a significant leap toward the development of highly energy-efficient reconfigurable integrated circuits. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2023.3347628 |