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Energy-Efficient Reconfigurable Transistor Achieving Sub-Nanojoule Consumption Per Programming Event

We hereby present experimental demonstration of the energy-efficient ferroelectric based electrostatically doping (Fe-ED) reconfigurable field-effect transistors (RFETs). By incorporating the ferroelectric program gates (Fe-PGs), our Fe-ED RFETs obtain the non-volatile reconfigurability between N/P...

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Bibliographic Details
Published in:IEEE electron device letters 2024-03, Vol.45 (3), p.484-487
Main Authors: Zheng, Siying, Zhou, Jiuren, Yao, Yupeng, Jin, Faxin, Liu, Ning, Sun, Wenxin, Liang, Jie, Liu, Yan, Hao, Yue, Han, Genquan
Format: Article
Language:English
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Summary:We hereby present experimental demonstration of the energy-efficient ferroelectric based electrostatically doping (Fe-ED) reconfigurable field-effect transistors (RFETs). By incorporating the ferroelectric program gates (Fe-PGs), our Fe-ED RFETs obtain the non-volatile reconfigurability between N/P modes. This achievement leads to an unprecedentedly low energy consumption per programming event, measuring below the nanojoule range. Additionally, these devices exhibit remarkable endurance, withstanding over 104 programmable cycles even under 1 ms pulse stress, and acceptable retention, maintaining their operation modes for at least 104 s. This device strategy represents a significant leap toward the development of highly energy-efficient reconfigurable integrated circuits.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2023.3347628