Uniform deposition of large-area graphene films on copper using low-pressure chemical vapor deposition technique

Large-area graphene of the order of centimeters was deposited on copper substrates by low-pressure chemical vapor deposition (LPCVD) using hexane as the carbon source. The effect of temperature and the carrier gas flowrates on the quality and uniformity of the as-deposited graphene was investigated...

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Bibliographic Details
Published in:Carbon Letters 2022-05, Vol.32 (3), p.781-787
Main Authors: Gürsoy, Mehmet, Çıtak, Emre, Karaman, Mustafa
Format: Article
Language:English
Subjects:
Carbon
Carbon sources
Carrier gases
Catalysts
Chemical vapor deposition
Contact angle
Copper
Electric contacts
Electrical conductivity
Electrical resistivity
Flow rates
Graphene
Hexanes
Hydrogen
Low pressure
Mathematical analysis
Raman spectra
Raman spectroscopy
Substrates
Temperature
Temperature effects
Vapors
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Summary:Large-area graphene of the order of centimeters was deposited on copper substrates by low-pressure chemical vapor deposition (LPCVD) using hexane as the carbon source. The effect of temperature and the carrier gas flowrates on the quality and uniformity of the as-deposited graphene was investigated using the Raman analysis. The film deposited at 870 °C with a total carrier gas flowrate of 50 sccm is predominantly single-layer with very low defects according to the Raman spectra. The 2D/G peak intensity ratios obtained from the Raman spectra of samples from three different locations of graphene deposited on a whole copper catalyst was used to calculate the large-area uniformity. Based on the results, a very high uniformity of 89.6% was calculated for the graphene deposited at 870 °C. The uniformity was observed to decrease with increasing temperature. Similar to the thickness uniformity, the electrical conductivity values obtained as a result of I–V measurements and water contact angle measurements were found to be close to each other for the graphene deposited under the same deposition conditions.
ISSN:1976-4251
2233-4998
DOI:10.1007/s42823-021-00309-3