Energy Density Dependence of Bonding Characteristics of Selective Laser-Melted Nb–Si-Based Alloy on Titanium Substrate

• Published in: Acta metallurgica sinica : English letters 2018-05, Vol.31 (5), p.477-486
• Main Authors: Guo, Yue-Ling, Jia, Li-Na, Kong, Bin, Huang, Yong-Lin, Zhang, Hu
• Format: Article
• Language: English
• Subjects: Additive manufacturing; Alloy powders; Bonding; Characterization and Evaluation of Materials; Chemistry and Materials Science; Contact angle; Corrosion and Coatings; Interfacial bonding; Laser beam melting; Lasers; Materials Science; Mechanical properties; Metallic Materials; Microstructure; Morphology; Nanotechnology; Organometallic Chemistry; Oxidation; Penetration depth; Powder metallurgy; Process parameters; Silicon base alloys; Spectroscopy/Spectrometry; Titanium alloys; Titanium base alloys; Tribology
• ISSN: 1006-7191; 2194-1289
• DOI: 10.1007/s40195-017-0670-8

Spherical Nb–20Si–24Ti–2Cr–2Al pre-alloyed powders were processed by selective laser melting (SLM) on Ti6Al4V substrates with different energy densities. A series of single tracks and single layers were produced using different processing parameters, including powder size, laser power, scanning speed and hatch distance. Results showed that the pre-alloyed powders ranging from 45 to 75 μm were more applicable to SLM with less balling tendency, in comparison with those between 75 and 180 μm. The increase in linear energy density (LED) resulted in the decrease in contact angle and the increase in the width of single track as well as its penetration depth into the substrate. Smaller hatch distance leaded to a larger remelted part of the former track and a higher volumetric laser energy density. With a thickness of 75.6 μm, an interfacial intermediate layer, enriched in Ti and depleted in Nb, Si, Cr and Al, was formed between the SLM part and the Ti6Al4V substrate. The mechanisms of the elimination of balling phenomenon by employing a higher LED and the interfacial bonding characteristics between Nb–Si-based alloys via SLM and the Ti6Al4V substrate were discussed.