Optimization of Step-Etched Junction Termination Extensions for Vertical GaN Devices

This work provides the first demonstration of a multipoint fit from theory to experiment for step-etched junction terminations on vertical gallium nitride (GaN) devices. Viable edge termination methods in GaN are limited due to challenges with selective-area doping. We report on a study that determi...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2024-03, Vol.71 (3), p.1541-1545
Main Authors: Binder, Andrew T., Steinfeldt, Jeffrey, Allerman, Andrew A., Rummel, Brian D., Glaser, Caleb, Yates, Luke, Kaplar, Robert J.
Format: Article
Language:English
Subjects:
Breakdown
Doping
edge termination
Electric breakdown
Electric fields
Gallium nitride
Gallium nitrides
Image edge detection
junction termination extension (JTE)
Junctions
Passivation
power devices
Semiconductor diodes
Surface charge
vertical gallium nitride (GaN)
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Summary:This work provides the first demonstration of a multipoint fit from theory to experiment for step-etched junction terminations on vertical gallium nitride (GaN) devices. Viable edge termination methods in GaN are limited due to challenges with selective-area doping. We report on a study that determines the optimal charge in the junction termination extension (JTE) of a GaN-based p-n diode to aid in the design of multizone JTEs. Experimental results show a step-thickness offset compared to theoretical prediction, which is attributed to plasma-induced etch damage, as well as variation in passivation-related charge, surface charge, and doping profile variations. Results are supported by electroluminescence imaging, which confirms the match from theory to experiment.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3344057