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Optimization of Step-Etched Junction Termination Extensions for Vertical GaN Devices

This work provides the first demonstration of a multipoint fit from theory to experiment for step-etched junction terminations on vertical gallium nitride (GaN) devices. Viable edge termination methods in GaN are limited due to challenges with selective-area doping. We report on a study that determi...

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Published in:	IEEE transactions on electron devices 2024-03, Vol.71 (3), p.1541-1545
Main Authors:	Binder, Andrew T., Steinfeldt, Jeffrey, Allerman, Andrew A., Rummel, Brian D., Glaser, Caleb, Yates, Luke, Kaplar, Robert J.
Format:	Article
Language:	English
Subjects:	Breakdown Doping edge termination Electric breakdown Electric fields Gallium nitride Gallium nitrides Image edge detection junction termination extension (JTE) Junctions Passivation power devices Semiconductor diodes Surface charge vertical gallium nitride (GaN)
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container_title	IEEE transactions on electron devices
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creator	Binder, Andrew T. Steinfeldt, Jeffrey Allerman, Andrew A. Rummel, Brian D. Glaser, Caleb Yates, Luke Kaplar, Robert J.
description	This work provides the first demonstration of a multipoint fit from theory to experiment for step-etched junction terminations on vertical gallium nitride (GaN) devices. Viable edge termination methods in GaN are limited due to challenges with selective-area doping. We report on a study that determines the optimal charge in the junction termination extension (JTE) of a GaN-based p-n diode to aid in the design of multizone JTEs. Experimental results show a step-thickness offset compared to theoretical prediction, which is attributed to plasma-induced etch damage, as well as variation in passivation-related charge, surface charge, and doping profile variations. Results are supported by electroluminescence imaging, which confirms the match from theory to experiment.
doi_str_mv	10.1109/TED.2023.3344057
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subjects	Breakdown Doping edge termination Electric breakdown Electric fields Gallium nitride Gallium nitrides Image edge detection junction termination extension (JTE) Junctions Passivation power devices Semiconductor diodes Surface charge vertical gallium nitride (GaN)
title	Optimization of Step-Etched Junction Termination Extensions for Vertical GaN Devices
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