Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition

• Published in: Acta metallurgica sinica : English letters 2019-12, Vol.32 (12), p.1530-1536
• Main Authors: He, Ying-Feng, Li, Mei-Ling, Liu, San-Jie, Wei, Hui-Yun, Ye, Huan-Yu, Song, Yi-Meng, Qiu, Peng, An, Yun-Lai, Peng, Ming-Zeng, Zheng, Xin-He
• Format: Article
• Language: English
• Subjects: Atomic layer epitaxy; Characterization and Evaluation of Materials; Chemical properties; Chemical vapor deposition; Chemistry and Materials Science; Corrosion and Coatings; Gallium nitrides; Graphene; Heterojunctions; Low temperature; Materials Science; Metallic Materials; Molecular beam epitaxy; Multilayers; Nanostructured materials; Nanotechnology; Nitrogen plasma; Nucleation; Optical properties; Organic chemicals; Organometallic Chemistry; Photoelectrons; Photoluminescence; Physical properties; Plasma etching; Room temperature; Semiconductors; Spectroscopy/Spectrometry; Spectrum analysis; Temperature; Tensile stress; Thin films; Tribology; Wurtzite; X ray photoelectron spectroscopy
• ISSN: 1006-7191; 2194-1289
• DOI: 10.1007/s40195-019-00938-8

In this work, the GaN thin films were directly deposited on multilayer graphene (MLG) by plasma-enhanced atomic layer deposition. The deposition was carried out at a low temperature using triethylgallium (TEGa) precursor and Ar/N 2 /H 2 plasma. Chemical properties of the bulk GaN and GaN–graphene interface were analyzed using X-ray photoelectron spectroscopy. The sharp interface between GaN and graphene was verified via X-ray reflectivity and transmission electron microscope. The microstructures and the nucleation behaviors of the GaN grown on graphene have been also studied. The results of grazing incidence X-ray diffraction and Raman spectrum indicate that the as-deposited sample is polycrystalline with wurtzite structure and has a weakly tensile stress. Optical properties of the sample were investigated by photoluminescence (PL) at room temperature. The successful growth of GaN on MLG at a low temperature opens up the possibility of ameliorating the performance of electronic and optical devices based on GaN/graphene heterojunction.