Robustness of Raised Buried Oxide Ferro Electric Tunnel FET in presence of Temperature and Traps and its Analog/RF Performance

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2024-04, Vol.130 (4), Article 223
• Main Authors: Meriga, Sirisha, Bhowmick, Brinda
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Condensed Matter Physics; Ferroelectric materials; Ferroelectricity; Field effect transistors; High temperature effects; Machines; Manufacturing; Mathematical analysis; Nanotechnology; Optical and Electronic Materials; Parameters; Physics; Physics and Astronomy; Processes; Room temperature; Semiconductor devices; Silicon; SOI (semiconductors); Surfaces and Interfaces; Thin Films; Transconductance; Transistors; Transit time; Tunnels
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-024-07357-2

The self-heating effect of the silicon-on-insulator (SOI)-raised-buried-oxide (RBOX) ferroelectric tunnel field effect transistor is explored in this article. Proposed device reliability issues have been examined by activating the acceptor and donor uniform and Gaussian interface trap concentrations (ITCs). The proposed TFET is designed to diminish the ambipolar current, intensify on-state current and to improve subthreshold slope. The device performance for Analog/RF applicability is also tested by calculating the capacitances (Cgg–3.6 × 10 −16 F/µm), transconductance in the order of 7.3 × 10 −3 S/µm, the cutoff frequency of 71 THz, and further transistor frequency product of 3.1 × 10 15 Hz/V, transit time (1.4 × 10 −15 s), and gain–bandwidth product of 12 THz are determined. All these parameter variations are investigated by changing the temperature and trap concentrations. The parameters have been compared with the room temperature and noticed an improved performance in terms of Analog/RF applicability. In addition, the introduction of the trap concentrations at the interfaces such as front gate oxide/silicon and the silicon/buried oxide is compared with no trap concentrations. It is proven that for Analog/RF applications, the proposed SOI-RBOX-ferroelectric-TFET exhibits the prominent behavior.