Optical Probing Position Sensitivity Characteristics of a Photodetecting Element Based on High-Resistivity CdSe Layers

— The output voltage, position sensitivity, and spectral sensitivity of a photodetecting element based on high-resistivity photosensitive CdSe layers have been shown for the first time to decrease hyperbolically with increasing layer thickness (in the range 6–60 μm) and increase linearly with increa...

Full description

Saved in:
Bibliographic Details
Published in:Inorganic materials 2023-11, Vol.59 (11), p.1242-1249
Main Authors: Chukita, V. I., Voronov, A. V., Chukichev, M. V., Feshchenko, V. S.
Format: Article
Language:English
Subjects:
Cadmium tellurides
Chemistry
Chemistry and Materials Science
Electrical resistivity
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Materials Science
Photosensitivity
Spectral sensitivity
Thickness
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:— The output voltage, position sensitivity, and spectral sensitivity of a photodetecting element based on high-resistivity photosensitive CdSe layers have been shown for the first time to decrease hyperbolically with increasing layer thickness (in the range 6–60 μm) and increase linearly with increasing input electric current. The high position and spectral sensitivity found in this study (70.8 mV/(mm μA mW) and 375 mV/(μA mW), respectively), which considerably exceeds that of cadmium telluride layers, demonstrate that high-resistivity CdSe layers have considerable potential as a material of position-sensitive photodetectors.
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168523110031