Forming Regimes of Pd/Ge/Au Contact System to n-GaAs Influence on Its Electric Parameters

The investigations of Pd/Ge/Au contact system forming regimes influence on the specific contact resistivity to n -type conductivity GaAs layer were carried out. The method of samples surface treatment before the layers evaporation and thermal annealing regimes in H 2 , N 2 , and Ar atmosphere influe...

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Bibliographic Details
Published in:Technical physics letters 2023-12, Vol.49 (Suppl 1), p.S64-S67
Main Authors: Malevskaya, A. V., Soldatenkov, F. Yu, Levin, R. V., Potapovich, N. S.
Format: Article
Language:English
Subjects:
Annealing
Classical and Continuum Physics
Electric contacts
Electrical resistivity
Gold
Palladium
Parameters
Physics
Physics and Astronomy
Surface treatment
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Summary:The investigations of Pd/Ge/Au contact system forming regimes influence on the specific contact resistivity to n -type conductivity GaAs layer were carried out. The method of samples surface treatment before the layers evaporation and thermal annealing regimes in H 2 , N 2 , and Ar atmosphere influence on contact system parameters was investigated. The specific contact resistivity value (2–3) × 10 –6 Ohm cm 2 at the reduced annealing temperature 190°C was archived..
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785023900388