Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement

The electroluminescent characteristics of the InAs/InAs 1– y Sb y /InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region ( y > 0.09) in the temperature range 4.2–300 K have been studied. Stimulated emission was achieved in the wavelength range...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2023-05, Vol.57 (5), p.263-267
Main Authors: Semakova, A. A., Ruzhevich, M. S., Romanov, V. V., Bazhenov, N. L., Mynbaev, K. D., Moiseev, K. D.
Format: Article
Language:English
Subjects:
Asymmetry
Current carriers
Electroluminescence
Emission analysis
Heterojunctions
Heterostructures
Indium antimonide
Indium arsenide antimonide phosphide
Indium arsenides
Intermetallic compounds
Light emitting diodes
Low temperature
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Radiative recombination
Solid solutions
Stimulated emission
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Summary:The electroluminescent characteristics of the InAs/InAs 1– y Sb y /InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region ( y > 0.09) in the temperature range 4.2–300 K have been studied. Stimulated emission was achieved in the wavelength range 4.1–4.2 μm at low temperatures ( T < 30 K). It was found that the electroluminescence spectra were formed as a result of the superposition of contributions from different channels of radiative recombination of charge carriers near the type II heterointerface. The effect of the quality of the type II InAsSb/InAsSbP heterojunction on the radiative interface transitions with an increase in the content of InSb in the ternary solid solution is considered.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782623070163