Internal Loss in Diode Lasers with Quantum Well-Dots

The internal loss at the lasing threshold were studied experimentally and numerically in laser cavities comprising dense arrays of InGaAs/GaAs quantum dots (quantum well-dots) as a function of the number of their planes and the output loss. Numerical values of the parameters were found that determin...

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Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2023-11, Vol.57 (11), p.513-518
Main Authors: Zhukov, A. E., Nadtochiy, A. M., Kryzhanovskaya, N. V., Shernyakov, Yu. M., Gordeev, N. Yu, Serin, A. A., Mintairov, S. A., Kalyuzhnyy, N. A., Payusov, A. S., Kornyshov, G. O., Maximov, M. V., Wang, Y.
Format: Article
Language:English
Subjects:
Laser arrays
Laser cavities
Lasers
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Quantum dots
Quantum wells
Semiconductor lasers
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container_end_page 518
container_issue 11
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container_title Semiconductors (Woodbury, N.Y.)
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creator Zhukov, A. E.
Nadtochiy, A. M.
Kryzhanovskaya, N. V.
Shernyakov, Yu. M.
Gordeev, N. Yu
Serin, A. A.
Mintairov, S. A.
Kalyuzhnyy, N. A.
Payusov, A. S.
Kornyshov, G. O.
Maximov, M. V.
Wang, Y.
description The internal loss at the lasing threshold were studied experimentally and numerically in laser cavities comprising dense arrays of InGaAs/GaAs quantum dots (quantum well-dots) as a function of the number of their planes and the output loss. Numerical values of the parameters were found that determine the free-carrier absorption in the active region and in the waveguiding layer. The optimal design of the laser diode was determined to achieve the highest external differential efficiency.
doi_str_mv 10.1134/S1063782623090191
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subjects Laser arrays
Laser cavities
Lasers
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Quantum dots
Quantum wells
Semiconductor lasers
title Internal Loss in Diode Lasers with Quantum Well-Dots
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