Synthesis of Thin Single-Crystalline α-Cr2O3 Layers on Sapphire Substrates by Ultrasonic-Assisted Chemical Vapor Deposition

Single-crystalline α-Cr 2 O 3 layers were synthesized on a sapphire substrate with a basal orientation in a laboratory reactor using ultrasonic-assisted chemical vapor deposition in the temperature range of 700–850°C. The influence of the growth temperature on the structural quality of the layer was...

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Bibliographic Details
Published in:Technical physics letters 2023-12, Vol.49 (Suppl 3), p.S284-S287
Main Authors: Nikolaev, V. I., Timashov, R. B., Stepanov, A. I., Stepanov, S. I., Chikiryaka, A. V., Shcheglov, M. P., Polyakov, A. Ya
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Chromium oxides
Classical and Continuum Physics
Light transmission
Physics
Physics and Astronomy
Sapphire
Single crystals
Substrates
Thickness
Thin films
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Summary:Single-crystalline α-Cr 2 O 3 layers were synthesized on a sapphire substrate with a basal orientation in a laboratory reactor using ultrasonic-assisted chemical vapor deposition in the temperature range of 700–850°C. The influence of the growth temperature on the structural quality of the layer was studied by X-ray diffraction. At a growth temperature of 800°C, continuous layers with a thickness of about 1 μm were obtained. The layers were transparent in the visible region with a slightly greenish tint and showed some light transmission up to wavelengths of ~350 nm. The full width at half maximum of the rocking curve for reflection 0006 was ~300 arcsec.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785023010273