Relationship between Wavelength and Gain in Lasers Based on Quantum Wells, Dots, and Well-Dots

A systematic study of a series of InGaAs/GaAs lasers in the 1–1 . 3 μm optical range based on quantum wells (2D), quantum dots (0D), and quantum well-dots of transitional (0D/2D) dimensionality is presented. In a wide range of pump currents, the dependences of the lasing wavelength on the layer gain...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2023-12, Vol.57 (12), p.539-542
Main Authors: Kornyshov, G. O., Gordeev, N. Yu, Shernyakov, Yu. M., Beckman, A. A., Payusov, A. S., Mintairov, S. A., Kalyuzhnyy, N. A., Maximov, M. V.
Format: Article
Language:English
Subjects:
Gallium arsenide lasers
Lasers
Lasing
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Quantum dots
Quantum wells
Waveguides
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Summary:A systematic study of a series of InGaAs/GaAs lasers in the 1–1 . 3 μm optical range based on quantum wells (2D), quantum dots (0D), and quantum well-dots of transitional (0D/2D) dimensionality is presented. In a wide range of pump currents, the dependences of the lasing wavelength on the layer gain constant, a parameter which allows comparing lasers with different types of active region and various waveguide designs, are measured and analyzed. It is shown that the maximum optical gain of the quantum well-dots is significantly higher, and the range of lasing rawavelengths achievable in edge-emitting lasers without external resonators is wider than in lasers based on quantum wells and quantum dots.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782623080079