Zinc‐Imidazolate Films as an All‐Dry Resist Technology (Adv. Funct. Mater. 12/2024)

Zinc‐Imidazolate Films In article number 2311149, Michael Tsapatsis, D. Howard Fairbrother, and co‐workers report an all‐dry resist technology based on an amorphous zinc imidazolate metal‐organic framework deposited by atomic/molecular layer deposition and developed by low temperature gas phase etch...

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Bibliographic Details
Published in:Advanced functional materials 2024-03, Vol.34 (12), p.n/a
Main Authors: Corkery, Peter, Waltz, Kayley E., Eckhert, Patrick M., Ahmad, Mueed, Kraetz, Andrea, Miao, Yurun, Lee, Dennis T., Abdel‐Rahman, Mohammed K., Lan, Yucheng, Haghi‐Ashtiani, Paul, Stein, Aaron, Boscoboinik, J. Anibal, Tsapatsis, Michael, Fairbrother, D. Howard
Format: Article
Language:English
Subjects:
dry development
dry etching
electron beam lithography
electron beam resist
high‐resolution patterning
Low temperature
molecular layer deposition
solvent‐free
Vapor phases
Zinc
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Summary:Zinc‐Imidazolate Films In article number 2311149, Michael Tsapatsis, D. Howard Fairbrother, and co‐workers report an all‐dry resist technology based on an amorphous zinc imidazolate metal‐organic framework deposited by atomic/molecular layer deposition and developed by low temperature gas phase etching, achieving resolution down to 22 nm. This methodology introduces a new direction for solvent‐free resist processing, enabling scalable, high‐resolution patterning techniques for advanced semiconductor fabrication.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.202470069