Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench

This work develops a regrown fishbone trench (RFT) structure in selective area growth (SAG) technique to fabricate recessed-gate normally off GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs). The RFT structure effectively modulates the electric field at high drain and...

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Bibliographic Details
Published in:Applied physics letters 2024-03, Vol.124 (13)
Main Authors: He, JiaQi, Wang, PeiRan, Du, FangZhou, Wen, KangYao, Jiang, Yang, Tang, ChuYing, Deng, ChenKai, Li, MuJun, Hu, QiaoYu, Tao, Nick, Xiang, Peng, Cheng, Kai, Wang, Qing, Li, Gang, Yu, HongYu
Format: Article
Language:English
Subjects:
Breakdown
Carrier density
Electric fields
Electric potential
Field weakening
Gallium nitrides
High electron mobility transistors
MIS (semiconductors)
Semiconductor devices
Voltage
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Summary:This work develops a regrown fishbone trench (RFT) structure in selective area growth (SAG) technique to fabricate recessed-gate normally off GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs). The RFT structure effectively modulates the electric field at high drain and gate biases, thus allowing the device to feature improved off-state and gate breakdown performance with a high positive Vth of 2 V. The simulated carrier concentration and electric field distributions reveal the mechanism of electric field weakening by RFT architecture. Meanwhile, the current collapse phenomenon is significantly suppressed, and the gate voltage swing is also enlarged. The maximum gate drive voltage of 9.2 V for 10-year reliability of RFT GaN MIS-HEMT, together with the improved linearity and block voltage, broadens the applications of SAG devices. Furthermore, the RFT structure also provides an etching-free method for fabricating normally off GaN MIS-HEMTs with multi-dimensional gates.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0193734