Microstructure and growth of Cu hillock on redistribution line under electromigration

The formation of hillock at the anode side of a circuit under electromigration is detrimental to electrical performance and electronic reliability. The study presented a detailed investigation of the microstructure of Cu hillock formed on 2 μm x 3 μm Cu redistribution line under high electrical curr...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2024-03, Vol.35 (9), p.659, Article 659
Main Authors: Huang, Yen-Cheng, Tsai, Min-Yan, Lin, Ting-Chun, Lin, Yung-Sheng, Hung, Chi-Pin, Lin, Kwang-Lung
Format: Article
Language:English
Subjects:
Annealing
Characterization and Evaluation of Materials
Chemistry and Materials Science
Copper
Domes
Electromigration
Electron back scatter
Electron microscopes
Grain boundaries
Investigations
Materials Science
Microstructure
Optical and Electronic Materials
Plating
Surface diffusion
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Summary:The formation of hillock at the anode side of a circuit under electromigration is detrimental to electrical performance and electronic reliability. The study presented a detailed investigation of the microstructure of Cu hillock formed on 2 μm x 3 μm Cu redistribution line under high electrical current density 1.44 × 10 7 A/cm 2 . The electron backscatter diffraction analysis revealed that the microstructure of the Cu redistribution line remain intact after 162 min current stressing. High-resolution transmission electron microscope analysis showed that the dome shape Cu hillock formed is polycrystalline with amorphous inclusion and twin structure. A mechanism considering radial surface diffusion of Cu atoms was proposed to illustrate the growth of dome shape Cu hillock under electromigration.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-024-12407-9