4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars

• Published in: Journal of electronic materials 2024-05, Vol.53 (5), p.2601-2608
• Main Authors: Fletcher, A. S. Augustine, Franklin, S. Angen, Murugapandiyan, P., Ajayan, J., Nirmal, D.
• Format: Article
• Language: English
• Subjects: Breakdown; Characterization and Evaluation of Materials; Chemistry and Materials Science; Dielectrics; Electric fields; Electric potential; Electronics and Microelectronics; Field effect transistors; Instrumentation; Materials Science; Metal oxide semiconductors; MOSFETs; Optical and Electronic Materials; Original Research Article; Semiconductor devices; Silicon carbide; Silicon dioxide; Solid State Physics; Transconductance; Voltage
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-024-11014-y

A novel structure of a silicon carbide (SiC) double-trench metal oxide semiconductor field-effect transistor (DTMOSFET) is proposed using a hafnium silicate (HfSiO x ) dielectric combined with PN pillars. Moreover, it has been characterized using Atlas TCAD Silvaco 2D simulations, and offers a very high breakdown voltage of 4879 V, which is due to the PN pillars under the N-drift layer altering the electric field distribution and HfSiO x dielectric that diminishes the impact ionization. The proposed DTMOSFET achieves a transconductance ( g m ) and drain current ( I D ) of 7 mA/mm and 780  µ S/mm, respectively. In addition, the simulated results show the cut-off frequency, f T = 1.28 GHz, and maximum frequency, f max  = 10.5 GHz. In addition, the peak electric field observed near the gate edge is 0.93 MV/cm. Moreover, the proposed DTPNH-MOSFET shows 11% improvement in breakdown voltage when compared to the breakdown voltage of conventional DTMOSFET. Therefore, the DTPNH-MOSFET shows a superior performance over other SiC MOSFETs and is a suitable device for future high-power electronics.