Eosin‐G and ethyl eosin dye sensitized CdS nanowires towards dye sensitized solar cells applications

One dimensional (1‐D) CdS nanowires have been grown through a low temperature chemical route and have been sensitized with eosin‐G and ethyl eosin dyes to broaden the absorption spectrum of CdS and to enhance the photoelectrochemical (PEC) performance under illumination. The used method is advantage...

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Bibliographic Details
Published in:Canadian journal of chemical engineering 2024-05, Vol.102 (5), p.1863-1872
Main Authors: Khodiyar, Bhoomi, Mendhe, Avinash C., Deshmukh, Tushar B., Sankapal, Babasaheb R.
Format: Article
Language:English
Subjects:
Absorption spectra
CdS nanowires
DSSCs
Dye-sensitized solar cells
Dyes
Electrochemical impedance spectroscopy
eosin‐G
ethyl eosin
Illumination
Low temperature
Nanowires
Quantum efficiency
Wettability
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Summary:One dimensional (1‐D) CdS nanowires have been grown through a low temperature chemical route and have been sensitized with eosin‐G and ethyl eosin dyes to broaden the absorption spectrum of CdS and to enhance the photoelectrochemical (PEC) performance under illumination. The used method is advantageous due to its simplicity, low cost, scalability, and controllability. Interestingly, eosin‐G and ethyl eosin dyes yield nearly four‐ and six‐fold increase in device efficiency compared to bare CdS when tested in dye‐sensitized solar cell assembly. Structural, surface morphological, optical, and surface wettability studies have been formulated for CdS, whereas identification of materials along with PEC investigations were conducted through current density–voltage (J‐V), external quantum efficiency (EQE), characteristics under the illumination of 94.6 mW/cm2 (AM 1.5G), and electrochemical impedance spectroscopy (EIS). Growth of one‐dimensional CdS nanowires (NWs) on a CdS flat layer, sensitized with eosin‐G and ethyl eosin dyes, which results in a nearly four‐ and six‐fold increase in device efficiency compared to bare CdS NWs, respectively. Dye sensitization is evident through a noticeable increment in saturation current and open‐circuit voltage, as observed in the current density–voltag (J‐V) characteristic curve. Additionally, a significant enhancement in the external quantum efficiency (EQE) value, approximately 8.3%, further highlights the improved performance.
ISSN:0008-4034
1939-019X
DOI:10.1002/cjce.25173