Multimode Generation of Light in an Injection Semiconductor Laser Based on a Chiral AlAs/(Al,Ga)As/GaAs Microcavity

Experimental investigations of AlAs/(Al,Ga)As/GaAs vertical-cavity surface-emitting lasers in multimode generation regime are performed. A high degree of circular polarization (>70%) is obtained for different modes of generation measured with high spectral resolution. Detailed maps of the spatial...

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Bibliographic Details
Published in:Bulletin of the Russian Academy of Sciences. Physics 2024-02, Vol.88 (2), p.156-159
Main Authors: Maksimov, A. A., Tartakovskii, I. I.
Format: Article
Language:English
Subjects:
Aluminum arsenides
Angular distribution
Circular polarization
Gallium arsenide
Hadrons
Heavy Ions
Laser applications
Nuclear Physics
Physics
Physics and Astronomy
Semiconductor lasers
Spectral resolution
Vertical cavity surface emission lasers
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Summary:Experimental investigations of AlAs/(Al,Ga)As/GaAs vertical-cavity surface-emitting lasers in multimode generation regime are performed. A high degree of circular polarization (>70%) is obtained for different modes of generation measured with high spectral resolution. Detailed maps of the spatial and angular distribution of the intensity of laser radiation are plotted.
ISSN:1062-8738
1934-9432
DOI:10.1134/S1062873823705147