Multimode Generation of Light in an Injection Semiconductor Laser Based on a Chiral AlAs/(Al,Ga)As/GaAs Microcavity

Experimental investigations of AlAs/(Al,Ga)As/GaAs vertical-cavity surface-emitting lasers in multimode generation regime are performed. A high degree of circular polarization (>70%) is obtained for different modes of generation measured with high spectral resolution. Detailed maps of the spatial...

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Published in:Bulletin of the Russian Academy of Sciences. Physics 2024-02, Vol.88 (2), p.156-159
Main Authors: Maksimov, A. A., Tartakovskii, I. I.
Format: Article
Language:English
Subjects:
Aluminum arsenides
Angular distribution
Circular polarization
Gallium arsenide
Hadrons
Heavy Ions
Laser applications
Nuclear Physics
Physics
Physics and Astronomy
Semiconductor lasers
Spectral resolution
Vertical cavity surface emission lasers
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Tartakovskii, I. I.
description Experimental investigations of AlAs/(Al,Ga)As/GaAs vertical-cavity surface-emitting lasers in multimode generation regime are performed. A high degree of circular polarization (>70%) is obtained for different modes of generation measured with high spectral resolution. Detailed maps of the spatial and angular distribution of the intensity of laser radiation are plotted.
doi_str_mv 10.1134/S1062873823705147
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subjects Aluminum arsenides
Angular distribution
Circular polarization
Gallium arsenide
Hadrons
Heavy Ions
Laser applications
Nuclear Physics
Physics
Physics and Astronomy
Semiconductor lasers
Spectral resolution
Vertical cavity surface emission lasers
title Multimode Generation of Light in an Injection Semiconductor Laser Based on a Chiral AlAs/(Al,Ga)As/GaAs Microcavity
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