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Enhancing the photocatalytic activity of Bi2MoO6 by constructing tailored composites through a turnable amount of MoS2

Ciprofloxacin (CIP, C 17 H 18 FN 3 O 3 ), one of the main pollution sources detected in water, has raised intense issues. In order to resolve this issue, it is essential to achieve efficient degradation of CIP under visible light. Herein, a set of two-dimensional composites MoS 2 /Bi 2 MoO 6 were co...

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Published in:Journal of materials science. Materials in electronics 2024-04, Vol.35 (10), p.732, Article 732
Main Authors: Zhang, Xiaoyan, Liu, Weifeng, Chen, Yubing, Chen, Piao, Zhao, Yingxin, Yang, Yun, Yang, Shuijin
Format: Article
Language:English
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Summary:Ciprofloxacin (CIP, C 17 H 18 FN 3 O 3 ), one of the main pollution sources detected in water, has raised intense issues. In order to resolve this issue, it is essential to achieve efficient degradation of CIP under visible light. Herein, a set of two-dimensional composites MoS 2 /Bi 2 MoO 6 were constructed, and proved via XRD, FT-IR, SEM, TEM, and XPS, respectively. In addition, the results recorded that when the optimized composites 0.5%-MoS 2 /Bi 2 MoO 6  were applied, the degradation rate of CIP was up to 91% at 120 min under the irradiation of visible light (> 395 nm) which was superior to that of the pure MoS 2  or Bi 2 MoO 6 . UV–Vis DRS, photocurrent, and electrical impedance analyses indicate that the outperformance of 0.5%-MoS 2 /Bi 2 MoO 6 is due to the optimized band gap and specific surface area. More importantly, a photocatalytic mechanism was proposed based on the analysis of GC–MS (according to the references (Dang et al. in Chem Eng J 422(15):130103, 2021; Zhu et al. in Environ Sci Pollut Res Int 30(11):28874–28888, 2022)) and active species. The result was manifest: CIP was degraded progressively under the attack of photocatalytically generated h + , . O 2 − . This work opens up a category for the construction of efficient Bi 2 MoO 6 -based composites and proposes a hypothetical mechanism and pathway for CIP degradation.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-024-12500-z