Interplay between electronic dephasing and localization in finite-sized Chern insulator

• Published in: arXiv.org 2024-04
• Main Authors: Bai, Yunhe, Li, Yuanzhao, Luan, Jianli, Chen, Yang, Gao, Zongwei, Song, Wenyu, Tong, Yitian, Zhang, Jinsong, Wang, Yayu, Qi, Junjie, Chui-Zhen, Chen, Jiang, Hua, Xie, X C, He, Ke, Yang, Feng, Xiao, Feng, Qi-Kun Xue
• Format: Article
• Language: English
• Subjects: Anderson localization; Epitaxial growth; Fragility; High temperature; Localization; Low temperature; Quantum Hall effect; Temperature; Temperature dependence; Thin films; Topological insulators; Transport properties
• ISSN: 2331-8422

Anderson localization is anticipated to play a pivotal role in the manifestation of the quantum anomalous Hall effect, akin to its role in conventional quantum Hall effects. The significance of Anderson localization is particularly pronounced in elucidating the reasons behind the fragility of the observed quantum anomalous Hall state in the intrinsic magnetic topological insulator MnBi2Te4 with a large predicted magnetic gap. Here, employing varying sized MnBi2Te4 micro/nano-structures fabricated from a single molecular-beam-epitaxy-grown thin film, we have carried out a systematic size- and temperature-dependent study on the transport properties of the films regarding the quantum anomalous Hall states. The low-temperature transport properties of the finite-sized MnBi2Te4 samples can be quantitatively understood through Anderson localization, which plays an indispensable role in stabilizing the ground states. At higher temperatures, the failure of electron localization induced by an excessively short electronic dephasing length is identified as the cause of deviation from quantization. The work reveals that electronic dephasing and localization are non-negligible factors in designing high-temperature quantum anomalous Hall systems.