Magnetothermal properties of two-dimensional electron gas in matched AlGaAs/GaABiN structure

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2024-05, Vol.130 (5), Article 314
• Main Authors: Mbarki, M., Ajnef, N., Rebey, A.
• Format: Article
• Language: English
• Subjects: Aluminum gallium arsenides; Characterization and Evaluation of Materials; Chemical potential; Condensed Matter Physics; Doping; Electron gas; Electrons; Heterostructures; Low temperature; Machines; Magnetic properties; Manufacturing; Nanotechnology; Optical and Electronic Materials; Parameters; Physical properties; Physics; Physics and Astronomy; Poisson equation; Processes; Surfaces and Interfaces; Thermodynamic properties; Thermodynamics; Thin Films
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-024-07437-3

The band anticrossing ( BAC ) model has been theoretically used to explore the electronic band structure of AlGaAs/GaAsBiN . Particularly, we have quantified the effective mass and the band offset as input parameters for the next part of our calculation. It has been suggested that the matched AlGaAs/GaAsBiN heterostructure has been proposed as an interface that confines electrons in a 2D sheet. Based on the self-consistent calculation of the coupled Schrodinger–Poisson equations, the physical properties of this structure are derived. For low temperatures, the chemical potential (μ), the magnetization ( M ), and the specific heat capacity ( C v ) in the presence of a quantizing magnetic field have been calculated to examine the thermodynamic aspects of the quantum non-interacting electron gas. We explore how the broadening parameter, doping level, and effective mass of the structure affect the thermodynamic properties ( μ , M, C v , and electronic entropy (S el )) of the gas. A particular interest is given to the analysis of the evolution of μ , M, C v and S el as a function of temperature for various estimated effective masses of GaAsBiN material and its level doping. It should be noted that the 2D gas in the AlGaAs/GaAsBiN system shows magnetothermal oscillations comportment. This behavior dependence has been analyzed, considering the filling factor (ν) and the electron effective masses.