Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric Hf0.5 Zr0.5O₂: Interfacial Layer Soft Breakdown and Physical Modeling

This article proposes a new mechanism, referred to as interfacial-layer soft breakdown (IL-SBD), to elucidate the intricate wake-up process in the ultrathin ferroelectric (FE) hafnium-zirconium oxide (HZO). Our study provides a comprehensive interpretation and compelling experimental evidence, highl...

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Published in:IEEE transactions on electron devices 2024-05, Vol.71 (5), p.3365-3370
Main Authors: Cho, Chen-Yi, Chao, Tzu-Yi, Lin, Tzu-Yao, Wang, I-Ting, De, Sourav, Chen, Yu-Sheng, Ong, Yi-Ching, Lin, Yu-De, Yeh, Po-Chun, Hou, Tuo-Hung
Format: Article
Language:English
Subjects:
Breakdown
Electric breakdown
Electrodes
Electron traps
Ferroelectric materials
Ferroelectricity
Interfacial layer (IL)
Iron
Mathematical models
soft breakdown
Switches
thickness scaling
ultrathin hafnium–zirconium oxide (HZO)
Voltage
Zirconium oxides
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container_issue 5
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container_title IEEE transactions on electron devices
container_volume 71
creator Cho, Chen-Yi
Chao, Tzu-Yi
Lin, Tzu-Yao
Wang, I-Ting
De, Sourav
Chen, Yu-Sheng
Ong, Yi-Ching
Lin, Yu-De
Yeh, Po-Chun
Hou, Tuo-Hung
description This article proposes a new mechanism, referred to as interfacial-layer soft breakdown (IL-SBD), to elucidate the intricate wake-up process in the ultrathin ferroelectric (FE) hafnium-zirconium oxide (HZO). Our study provides a comprehensive interpretation and compelling experimental evidence, highlighting the crucial role of the interfacial layer (IL) and its soft breakdown in the wake-up phenomenon. A multidomain FE wake-up model is developed, incorporating defect generation, trap-assisted tunneling (TAT) within the IL, and charge screening at the IL/HZO interface, validating the proposed mechanism. The model accurately reproduces the trend of thickness-dependent wake-up behavior and reveals additional variability induced by the wake-up process, emphasizing the utmost significance of minimizing the IL in ultrathin HZO devices.
doi_str_mv 10.1109/TED.2024.3379473
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source IEEE Electronic Library (IEL) Journals
subjects Breakdown
Electric breakdown
Electrodes
Electron traps
Ferroelectric materials
Ferroelectricity
Interfacial layer (IL)
Iron
Mathematical models
soft breakdown
Switches
thickness scaling
ultrathin hafnium–zirconium oxide (HZO)
Voltage
Zirconium oxides
title Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric Hf0.5 Zr0.5O₂: Interfacial Layer Soft Breakdown and Physical Modeling
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