Loading…

Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions

We report the electrical properties, deep trap spectra, and diffusion lengths of non-equilibrium carriers in Ni Schottky diodes and NiO/Ga2O3 heterojunctions (HJs) prepared on the same n−/n+ β-Ga2O3 epi structures. The heterojunctions decrease the reverse current of Ga2O3 high-power rectifiers. In H...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2024-04, Vol.135 (16)
Main Authors: Polyakov, A. Y., Yakimov, E. B., Saranin, D. S., Chernykh, A. V., Vasilev, A. A., Gostishchev, P., Kochkova, A. I., Alexanyan, L. A., Matros, N. R., Shchemerov, I. V., Pearton, S. J.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report the electrical properties, deep trap spectra, and diffusion lengths of non-equilibrium carriers in Ni Schottky diodes and NiO/Ga2O3 heterojunctions (HJs) prepared on the same n−/n+ β-Ga2O3 epi structures. The heterojunctions decrease the reverse current of Ga2O3 high-power rectifiers. In HJs, in contrast to Schottky diodes, the capacitance and AC conductance show a prominent frequency and temperature dependence, suggesting the presence of two temperature activation processes with activation energies of 0.17 and 0.1 eV. The deep trap spectra of the Schottky diodes and HJs differ by the absence in the HJ of deep electron traps E2* with level near Ec − 0.7 eV considered to be an important center of non-radiative recombination. This correlates with the observed increase in the diffusion length of non-equilibrium charge carriers in the HJs to 370 nm compared to 240 nm in the Schottky diodes. The diffusion length of charge carriers in p-NiO was found to be quite short, 30 nm. Possible reasons for the observed differences and possible origin of the minority-trap-like feature commonly reported to be present in the deep level spectra of HJs and also observed in our experiments are discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0203526